LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the LMUN5111DW1T1G series, two BRT devices are housed in the SOT–363 package which
is ideal for low–power surface mount applications where board space is at a premium.
. Simplifies Circuit Design
. Reduces Board Space
. Reduces Component Count
. Available in 8 mm, 7 inch/3000 Unit Tape and Reel
1
2
3
LMUN5111DW1T1G
Series
6
5
4
SC-88/SOT-363
. We declare that the material of product compliance with RoHS requirements.
Ordering Information
Device
LMUN51XXDW1T1G
LMUN51XXDW1T3G
Package
SC-88
SC-88
Shipping
3000/Tape&Reel
10000/Tape&Reel
6
5
4
Q
2
R
2
R
1
1
2
R
1
R
2
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Symbol Value
Unit
Collector-Base Voltage
V
CBO
–50
Vdc
Collector-Emitter Voltage
V
CEO
–50
Vdc
Collector Current
I
C
–100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
P
D
187 (Note 1.)
mW
256 (Note 2.)
T
A
= 25°C
1.5 (Note 1.)
mW/°C
Derate above 25°C
2.0 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature
1. FR–4 @ Minimum Pad
R
θJA
670 (Note 1.)
490 (Note 2.)
°C/W
Q
1
3
MARKING DIAGRAM
6
5
4
XX
1
2
3
xx = Device Marking
=
(See Page 2)
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
Symbol
P
D
Max
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
–55 to +150
Unit
mW
mW/°C
°C/W
°C/W
°C
R
θJA
R
θJL
T
J
, T
stg
2. FR–4 @ 1.0 x 1.0 inch Pad
1/12
LESHAN RADIO COMPANY, LTD.
LMUN5111DW1T1G
DEVICE MARKING AND RESISTOR VALUES
Device
Package
LMUN5111DW1T1G
LMUN5112DW1T1G
LMUN5113DW1T1G
LMUN5114DW1T1G
LMUN5115DW1T1G (Note 3.)
LMUN5116DW1T1G (Note 3.)
LMUN5130DW1T1G (Note 3.)
LMUN5131DW1T1G (Note 3.)
LMUN5132DW1T1G (Note 3.)
LMUN5133DW1T1G (Note 3.)
LMUN5134DW1T1G (Note 3.)
LMUN5135DW1T1G (Note 3.)
LMUN5136DW1T1G (Note 3.)
LMUN5137DW1T1G (Note 3.)
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
Marking
0A
0B
0C
0D
0E
0F
0G
0H
0J
0K
0L
0M
0N
0P
R
1
(K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
R
2
(K)
10
22
47
47
–
–
1.0
2.2
4.7
47
47
47
100
22
Series
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= –50 V, I
E
= 0)
I
CBO
Collector-Emitter Cutoff Current (V
CE
= –50 V, I
B
= 0)
I
CEO
I
EBO
Emitter-Base Cutoff Current
LMUN5111DW1T1G
(V
EB
= –6.0 V, I
C
= 0)
LMUN5112DW1T1G
LMUN5113DW1T1G
LMUN5114DW1T1G
LMUN5115DW1T1G
LMUN5116DW1T1G
LMUN5130DW1T1G
LMUN5131DW1T1G
LMUN5132DW1T1G
LMUN5133DW1T1G
LMUN5134DW1T1G
LMUN5135DW1T1G
LMUN5136DW1T1G
LMUN5137DW1T1G
Collector-Base Breakdown Voltage (I
C
= –10
µA,
I
E
= 0)
V
(BR)CBO
Collector-Emitter Breakdown Voltage(Note 4.)(I
C
= –2.0 mA,I
B
=0) V
(BR)CEO
ON CHARACTERISTICS
(Note 4.)
Collector-Emitter Saturation Voltage (I
C
= –10mA,I
E
= –0.3 mA)
(I
C
= –10mA, I
B
= –5mA)
(I
C
= –10mA, I
B
= –1mA)
V
CE(sat)
Min
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–50
–50
–
Typ
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
Unit
–100
nAdc
–500
nAdc
–0.5 mAdc
–0.2
–0.1
–0.2
–0.9
–1.9
–4.3
–2.3
–1.5
–0.18
–0.13
–0.2
–0.05
–0.13
–
Vdc
–
Vdc
–0.25
Vdc
LMUN5130DW1T1G/LMUN5131DW1T1G
LMUN5115DW1T1/LMUN5116DW1T1G
LMUN5132DW1T1G/LMUN5133DW1T1G/LMUN5134DW1T1G
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
2/12
LESHAN RADIO COMPANY, LTD.
LMUN5111DW1T1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
,)
Characteristic
Symbol
ON CHARACTERISTICS(Note
5.)
DC Current Gain
(V
CE
= –10 V, I
C
= –5.0 mA)
LMUN5111DW1T1G h
FE
LMUN5112DW1T1G
LMUN5113DW1T1G
LMUN5114DW1T1G
LMUN5115DW1T1G
LMUN5116DW1T1G
LMUN5130DW1T1G
LMUN5131DW1T1G
LMUN5132DW1T1G
LMUN5133DW1T1G
LMUN5134DW1T1G
LMUN5135DW1T1G
LMUN5136DW1T1G
LMUN5137DW1T1G
LMUN5111DW1T1G
LMUN5112DW1T1G
LMUN5114DW1T1G
LMUN5115DW1T1G
LMUN5116DW1T1G
LMUN5130DW1T1G
LMUN5131DW1T1G
LMUN5132DW1T1G
LMUN5133DW1T1G
LMUN5134DW1T1G
LMUN5135DW1T1G
(V
CC
= –5.0 V, V
B
= –3.5 V, R
L
= 1.0 kΩ) LMUN5113DW1T1G
(V
CC
= –5.0 V, V
B
= –5.5 V, R
L
= 1.0 kΩ) LMUN5136DW1T1G
(V
CC
= –5.0 V, V
B
= –4.0 V, R
L
= 1.0 kΩ) LMUN5137DW1T1G
V
OH
Output Voltage (off) (V
CC
= –5.0 V, V
B
= –0.5 V, R
L
= 1.0 kΩ)
(V
CC
= –5.0 V, V
B
= –0.05 V, R
L
= 1.0 kΩ) LMUN5130DW1T1G
(V
CC
= –5.0 V, V
B
= –0.25 V, R
L
= 1.0 kΩ) LMUN5115DW1T1G
LMUN5116DW1T1G
LMUN5131DW1T1G
LMUN5133DW1T1G
Output Voltage (on)
(V
CC
= –5.0 V, V
B
= –2.5 V, R
L
= 1.0 kΩ)
V
OL
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–4.9
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
130
140
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Vdc
(Continued)
Min
Typ
Max
Unit
Series
Vdc
3/12
LESHAN RADIO COMPANY, LTD.
LMUN5111DW1T1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
,) (Continued)
Characteristic
Symbol
Min
Typ
ON CHARACTERISTICS(Note
5.)
Input Resistor
LMUN5111DW1T1G
LMUN5112DW1T1G
LMUN5113DW1T1G
LMUN5114DW1T1G
LMUN5115DW1T1G
LMUN5116DW1T1G
LMUN5130DW1T1G
LMUN5131DW1T1G
LMUN5132DW1T1G
LMUN5133DW1T1G
LMUN5134DW1T1G
LMUN5135DW1T1G
LMUN5136DW1T1G
LMUN5137DW1T1G
Resistor Ratio LMUN5111DW1T1G/LMUN5112DW1T1G R
1
/R
2
LMUN5113DW1T1G/LMUN5136DW1T1G
LMUN5114DW1T1G/LMUN5115DW1T1G
LMUN5116DW1T1G/LMUN5130DW1T1G
LMUN5131DW1T1G/LMUN5132DW1T1G
LMUN5133DW1T1G
LMUN5134DW1T1G
LMUN5135DW1T1G
LMUN5137DW1T1G
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
0.8
0.17
–
0.8
0.055
0.38
0.038
1.7
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
kΩ
Max
Unit
Series
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
0
–50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
4/12
LESHAN RADIO COMPANY, LTD.
LMUN5111DW1T1G
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5111DW1T1G
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Series
0.1
h
FE
, DC CURRENT GAIN (NORMALIZED)
1
1000
100
0.01
0
20
40
50
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 2. V
CE(sat)
versus I
C
4
100
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
C ob CAPACITANCE (pF)
10
3
1
2
0.1
1
0.01
0
0
10
20
30
40
50
0.001
0
1
2
3
4
5
6
7
8
9
10
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance
100
Figure 5. Output Current versus Input Voltage
V in , INPUT VOLTAGE (VOLTS)
10
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
5/12
